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| SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. CATHODE MARK B 1 KDR784 SCHOTTKY BARRIER TYPE DIODE G FEATURES Low Forward Voltage : VF(3)=0.42V(Typ.) Small Package : USC. K A H E 2 D J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm. ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 30 30 300 100 1 200* 125 -55 125 UNIT V V mA mA A mW 1. ANODE 2. CATHODE M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 USC * : Mounted on a glass epoxy circuit board of 20 20mm, Marking Type Name UU ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT ) TEST CONDITION IF=1mA IF=5mA IF=100mA VR=30V VR=1V, f=1MHz MIN. TYP. 0.26 0.30 0.42 40 MAX. 0.35 0.40 0.55 15 A pF V UNIT SYMBOL 2003. 2. 25 Revision No : 2 F L 1/1 |
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